- 您现在的位置：买卖IC网 > Sheet目录461 > IXTH15N50L2 (IXYS)MOSFET N-CH 15A 500V TO-247
IXTA15N50L2 IXTP15N50L2
IXTH15N50L2
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-247 Outline
g fs
V DS = 10V, I D = 0.5 ? I D25 , Note 1
4.5
6.3
8.0
S
C iss
4080
pF
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 10V, 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 10 Ω (External)
265
68
38
73
110
65
123
pF
pF
ns
ns
ns
ns
nC
Q gs
Q gd
R thJC
R thCS
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
(TO-220)
(TO-247)
20
72
0.50
0.25
nC
nC
0.42 ° C/W
° C/W
° C/W
1 = Gate
2 = Drain
3 = Source
Safe Operating Area Specification
Characteristic Values
Symbol
Test Conditions
Min. Typ. Max.
SOA
V DS = 400V, I D = 375mA, T C = 75°C, t p = 2s
150
W
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-220 Outline
I S
I SM
V SD
t rr
Note
V GS = 0V
Repetitive, pulse width limited by T JM
I F = 15A, V GS = 0V, Note 1
I F = 15A, -di/dt = 100A/ μ s, V R = 100V, V GS = 0V
1: Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
570
15
60
1.5
A
A
V
ns
TO-263 Outline
Pins:
1 - Gate
2 - Drain
3 - Source
1 = Gate
2 = Drain
3 = Source
4 = Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IXTH160N075T
MOSFET N-CH 75V 160A TO-247
IXTH160N15T
MOSFET N-CH 150V 160A TO-247
IXTH16P20
MOSFET P-CH 200V 16A TO-247
IXTH180N10T
MOSFET N-CH 100V 180A TO-247
IXTH182N055T
MOSFET N-CH 55V 182A TO-247
IXTH200N085T
MOSFET N-CH 85V 200A TO-247
IXTH200N10T
MOSFET N-CH 100V 200A TO-247
IXTH20N60
MOSFET N-CH 600V 20A TO-247AD
相关代理商/技术参数
IXTH15N55
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 15A I(D) | TO-218VAR
IXTH15N60
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 15A I(D) | TO-218VAR
IXTH15N65
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 15A I(D) | TO-218VAR
IXTH15N70
制造商:INTERFET 制造商全称:INTERFET 功能描述:N-Channel Enhancement Mode
IXTH15P15
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 15A I(D) | TO-218VAR
IXTH15P20
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 15A I(D) | TO-218VAR
IXTH160N075T
功能描述:MOSFET 160 Amps 75V 5.5 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH160N10T
功能描述:MOSFET 160 Amps 100V 6.9 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
