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IXTA15N50L2 IXTP15N50L2
IXTH15N50L2
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-247 Outline
g fs
V DS = 10V, I D = 0.5 ? I D25 , Note 1
4.5
6.3
8.0
S
C iss
4080
pF
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 10V, 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 10 Ω (External)
265
68
38
73
110
65
123
pF
pF
ns
ns
ns
ns
nC
Q gs
Q gd
R thJC
R thCS
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
(TO-220)
(TO-247)
20
72
0.50
0.25
nC
nC
0.42 ° C/W
° C/W
° C/W
1 = Gate
2 = Drain
3 = Source
Safe Operating Area Specification
Characteristic Values
Symbol
Test Conditions
Min. Typ. Max.
SOA
V DS = 400V, I D = 375mA, T C = 75°C, t p = 2s
150
W
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-220 Outline
I S
I SM
V SD
t rr
Note
V GS = 0V
Repetitive, pulse width limited by T JM
I F = 15A, V GS = 0V, Note 1
I F = 15A, -di/dt = 100A/ μ s, V R = 100V, V GS = 0V
1: Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
570
15
60
1.5
A
A
V
ns
TO-263 Outline
Pins:
1 - Gate
2 - Drain
3 - Source
1 = Gate
2 = Drain
3 = Source
4 = Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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